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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings
E AS
I AS
Drain-Source Avalanche Energy
(Single Pulse)
Drain-Source Avalanche Current
V DD = -35 V, I D = -11 A, L=1mH
61
–14
mJ
A
Off Characteristics (Note 2)
BV DSS
I DSS
I GSS
Drain–Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage
V GS = 0 V,
V DS = –28 V,
V GS = ± 25 V,
I D = –250 μ A
V GS = 0 V
V DS = 0 V
–35
–1
± 100
V
μ A
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = –250 μ A
–1
–1.6
–3
V
R DS(on)
Static Drain–Source
On–Resistance
V GS = –10 V,
V GS = –4.5 V,
I D = –14 A
I D = –11 A
9.7
14.4
11.6
18
m ?
V GS = –10 V, I D = –14 A, T J =125 ° C
14.7
19
g FS
Forward Transconductance
V DS = –5 V,
I D = –14 A
35
S
Dynamic Characteristics
C iss
Input Capacitance
2370
pF
C oss
C rss
R G
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = –20 V,
f = 1.0 MHz
f = 1.0 MHz
V GS = 0 V,
470
250
3.6
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
Turn–On Delay Time
18
32
ns
t r
t d(off)
t f
Q g
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge, V GS = –10V
V DD = –20 V,
V GS = –10 V,
I D = –1 A,
R GEN = 6 ?
10
62
36
45
20
100
58
63
ns
ns
ns
nC
Q g
Q gs
Q gd
Total Gate Charge, V GS = –5V
Gate–Source Charge
Gate–Drain Charge
V DS = – 20 V, I D = –14 A
25
7
10
35
nC
nC
nC
FDD6637 Rev. C2(W)
www.fairchildsemi.com
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